BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.
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July 1 Rev 1. July 2 Rev 1. Datasueet information Where application information is given, it is advisory and does not form part of the specification.
Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor with an integrated damper diode in a plastic fullpack envelope. Philips customers using or selling these products for ub2508df in such applications do so at their own risk and agree to dqtasheet indemnify Philips for any damages resulting from such improper use or sale.
Budf philips semiconductors, budf datasheet. July 7 Rev 1. Budf transistor equivalent substitute crossreference search. Typical collector-emitter saturation voltage.
Buaf transistor equivalent substitute crossreference search. Typical collector storage and fall time. Buaf datasheet, buaf pdf, buaf data sheet, buaf manual, buaf pdf, buaf, datenblatt, electronics buaf, alldatasheet, free, datasheet. High collectorbase voltagevcbov high speed switching. This data sheet contains daatasheet or goal specifications for product development.
Exposure to limiting values for extended periods may affect device reliability. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
Refer to mounting instructions bu250df F-pack envelopes. C 1 Turn-off current. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.
No liability will be accepted by the publisher for any consequence of its bu2580df. II Extension for repetitive pulse operation. Typical base-emitter saturation voltage. C I Region of permissible DC operation. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack. Typical DC current gain. Stress above one or more of the limiting values may cause permanent damage to the device.
BUDF Datasheet PDF –
July 5 Rev 1. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
Silicon diffused power transistor buaf datasheet catalog. Forward bias safe operating area. SOT; The seating plane is electrically isolated from all terminals. Npn triple diffused buaf planar silicon transistor color tv horizontal output applicationsno bu2508sf diode to3pml.
Buaf datasheet, equivalent, cross reference search. Silicon diffused power transistor online from elcodis, view and download budf pdf datasheet, diodes, rectifiers specifications. The information presented in this document does not form part of any quotation or contract, it is believed bu2058df be accurate and reliable and may be changed without notice.
Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains final product specifications. July 6 Rev 1.