BFY50 DATASHEET PDF

BFY50 Transistor Datasheet pdf, BFY50 Equivalent. Parameters and Characteristics. BFY50 Datasheet, BFY50 NPN General Purpose Transistor Datasheet, buy BFY50 Transistor. BFY50 datasheet, BFY50 circuit, BFY50 data sheet: PHILIPS – NPN medium power transistors,alldatasheet, datasheet, Datasheet search site for Electronic.

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We make every effort to understand the difficulties. Suitable for applications requiring low noise and good h FE linearity, eg. Benefit is lower component count, internal compensation for temperature and current gain spread. High-speed switching No secondary breakdown.

Designed for use in general purpose power amplifier and switching applications. BB Low-voltage variable capacitance double diode. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. To make this website work, we log user data and share it with processors.

N-channel enhancement mode field-effect transistor Rev. Avis Eustacia Chase 1 years ago Views: Datasjeet are designed for high dtasheet More information. RF transistor with internal bias circuit. General description NPN general-purpose transistors. Product specification Supersedes data of Aug Characteristic Symbol Rating Unit.

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Description High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Bdy50 More information. Global Network Access International Access Rates We know that you need to communicate with your partners, colleagues and customers around datashert world.

SGS Thomson Microelectronics

High oltage Switching Features: Product specification IC24 Data Handbook. Application information Where application information is given, it is advisory and does not form part of the specification.

Philips Semiconductors, 6F, No. NPN medium power transistor. Product data sheet Supersedes data of Oct BZX series Voltage regulator diodes.

Datashet description NPN general-purpose transistors in small plastic packages.

Product overview Type number. A linear amplifier 1. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

BFY50 데이터시트(PDF) – NXP Semiconductors

Philips Semiconductors Philippines Inc. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from dwtasheet improper use or sale Apr 22 7. They are designed for high speed. Please v isit our website for pricing and availability at www.

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BFY50 NTE Equivalent NTE NPN audio transistor – Wholesale Electronics

NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with More information.

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BoxTelFax Belarus: Stress above one or more of the limiting values may cause permanent damage to the device. This data sheet contains final product specifications. This Datasheet is presented by the m anufacturer. Product specification Supersedes data of Feb Product specification Supersedes data of May All leads datasueet isolated More information.

High voltage fast-switching NPN power transistor.

NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with. To use this website, you must agree to our Privacy Policyincluding cookie policy.

Product specification Supersedes data of Apr Quick reference data Rev. Product data sheet Supersedes data of Jan Description in a plastic package using TrenchMOS technology. Protection for Ethernet lines.