2N914 DATASHEET PDF

2N from Fairchild Semiconductor. Find the PDF Datasheet, Specifications and Distributor Information. 2N Datasheet PDF Download – NPN Transistoor, 2N data sheet. 2N datasheet, 2N pdf, 2N data sheet, datasheet, data sheet, pdf, Central Semiconductor, Leaded Small Signal Transistor General Purpose.

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Both the TO-5 and TO-9 tran- sistor ca cases can be accommo- dated. In fact, you can design 99 per cent of devices today with Merck materials.

Write for a free copy today on your company letterhead: Units can switch 25 amps at collector-emitter voltages of 40, 60 and 80 v. Unit is designed as a dataheet panion to type 2N Key to the letter codes is: Silicon power tran- sistors with Vceo, Vcbo and Vces of and volts in two gain ranges. Whatever your silicon transistor application, evaluate Philco Planar Transistors.

2n datasheet pdf

You can select either common-emitter or com- mon-base configurations. A3, for example, means the type can be found in the third block of the Audio section. The tests may be pro- grammed in any order through an easy-to- use punch card system. PIV ratings’are from 50 to 1, volts for the 6 and 12 amp packages. Recovery times as low as 0. Marion and Vine St. A heat-treatable alloy, PD does not lose its high strength characteristics after exposure to high tem- peratures.

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2n914 datasheet pdf

Old-timers know Merck is a basic manufacturer of polycrystalline silicon, with the largest research budget in the industry during the past half decade. Transistors are classified according to seven application categories: Your production-line require- ments for identical plug-in units are met through tight control of junction and package characteristics.

This insures interchangeability in practical communications circuits. Germanium Point Datasheett Diodes The first industry standard subminiature glass general purpose and computer diode.

And, if theoretical analysis of this process is confirmed by tests now in progress, they will prove 2914 be more resistant to radiation, thus heralding improved performance and greater re- liability of space equipment.

Bipolar NPN RF transistor, TO-18

Oxide Surface Passivation — Prevents contamination of the junction by external agents. Where deviations from this occur they are noted. Types 2N are avail- able in the T dwtasheet, and types 2N are available in the TO- 18 case.

As you are undoubtedly aware, P.

AJ ,ge npn, AJ. Heat-treatable PD is particularly suited for applica- tions requiring extensive cold working and upsetting. He will be glad to assist you. The Series also features automatic detec- tion of incorrect programming and performs an equipment self-check test during each test sequence. They employ an extruded parallel fin design and may be used in either a vertical or horizontal position. You can specify parameters, logic levels.

Maximum forward voltage drop of less than 1. For complete information, including performance data, on this noteworthy new alloy, send for Brochure K. But unless you have invested much time and effort on your transistor file, it is bound to contain obsolete types and overlook new ones.

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As added benefits you’ll enjoy device uniformity, fewer rejects and simplified purchasing. For more details on any of these prod- ucts contact your nearest Hughes rep- resentative. In order of increasing power dissipation. These new volt capacitors show the same resistance to shock and vibration, the same stability of electrical parameters with temperature change, and the same low levels of leakage current as the lower- voltage J-Series units.

2N Datasheet(PDF) – Motorola, Inc

Though initially devised for datasheet pro- duction datzsheet high voltage silicon PNP transistors, there are strong indications that the Annular process yields major benefits for NPN and field effect tran- sistors and other semiconductor devices as well. Completely transistorized and compact, it provides simple, high speed operation at low initial cost.

AJ ,ge 65 65 pnp. It is claimed that the mod- el substantially increases transistor performance by optimiz- ing the effect of heat transfer coefficient available in free convec- tion. General Electric transistors exceed Minwteman Recovery times as low as 3.

This phenomenon circumvents the pas- sivation advantages of planar designs and results in excessive leakage cur- rents.